By Topic

A New Metallization Technology for Advanced Interconnects on Substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Nguyen, P. ; Engelhard Corp.,NJ ; Bachner, Frank J.

A new metailization system based on metallo-organic deposition (MOD) has been developed which offers the high resolution of thin-film technology while eliminating the need for expensive thin-film deposition techniques. The process is capable of resolving lines less than 0.0005 in wide in gold conductors in various types of substrates, such as fused silica, alumina, and glass. The resisivity, adhesion, bondability, and solderability of films deposited from metallo-organic solutions have been shown to be comparable to thin-film conductors on most substrates. On fused silica the MOD gold fim showed better adhesion than a sputtered gold conductor. Insertion loss measurements on a 50- \Omega microstrip line are equivalent to the losses for a thin-film line of TiW/Au. MOD resistor films have been deposited with sheet resistivities of 50 and 100 \Omega /square and a temperature coefficient resistance (TCR) of +220 ppm. Multilayer circuits have been built using both polyimide and lead borosilicate glass dielectrics.

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:10 ,  Issue: 4 )