By Topic

DCIV and spectral charge-pumping studies of γ-ray and X-ray irradiated power VDMOSFET devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. -S. Park ; Dept. of Electr. Eng., State Univ. of New York, Buffalo, NY, USA ; I. M. Na ; C. I. Lee ; C. R. Wie

This paper reports the total dose effects and post-irradiation anneal effects on the two recombination current peaks and the bottom current in commercial power VDMOSFET devices irradiated with 137Cs γ-ray or X-ray radiation. The two interface recombination current peaks show a slightly different rate of increase as a function of the radiation dose. Slightly different diode ideality factors are found in an n-channel device, 1.70 ± 0.10, 1.60 ± 0.10 and 1.20 ± 0.10 for the two DCIV current peaks and the bottom current, respectively. The saturation current of the gated diode, i.e., VDMOSFET, normalized by the input capacitance is shown to be a good parameter to monitor the interface state density. Spectral charge pumping data show that, of the above-midgap interface traps in an n-channel device, the energy below about Ei + 0.18 eV has a most significant increase in radiation-induced trap density and these traps may be responsible for the DCIV current peaks.

Published in:

IEEE Transactions on Nuclear Science  (Volume:49 ,  Issue: 6 )