By Topic

Single-event transients in high-speed comparators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Johnston, A.H. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Miyahira, T.F. ; Edmonds, L.D. ; Irom, F.

Single-event transients are investigated in comparators with switching speed below 80 ns, including one BiCMOS device. Modeling results show that the collapse of internal junctions after an ion strike delays the onset of collector current because of transient currents in the substrate that are not shielded by the buried layer. Transients in high-speed comparators are strongly affected by differential input voltage, but are suppressed in the bipolar comparators when the differential input voltage exceeds 200 mV. The BiCMOS device behaves differently because of the CMOS circuitry in latter stages.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 6 )