By Topic

SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Gasiot, G. ; STMicroelectronics, Crolles, France ; Ferlet-Cavrois, V. ; Baggio, J. ; Roche, P.
more authors

This work investigates the effects of 14-MeV neutron irradiation on bulk and silicon-on-insulator (SOI) technologies. Experimental results are reported with a study on the influence of the irradiation angle. These experiments are interpreted with a nuclear interaction code (MCNP: Monte Carlo N-Particle). The device architecture and the involved materials are shown to be determining parameters with respect to the device sensitivity.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 6 )