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Proton radiation effects in 0.35 μm partially depleted SOI MOSFETs fabricated on UNIBOND

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9 Author(s)
Li, Y. ; Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA ; Guofu Niu ; Cressler, J.D. ; Patel, J.
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We investigate the proton radiation tolerance of a 0.35 μm SOI technology on UNIBOND material. The radiation response is characterized by threshold-voltage shifts of the front-gate and back-gate transistors. An increase of the front-gate threshold voltage is observed on the n-channel MOSFETs after irradiation and is attributed to radiation-induced interface states at the front-gate oxide/silicon interface. A double gm peak behavior is observed on the back-gate gm-VGS curves for both n- and p-channel MOSFETs and is attributed to silicon/back-gate oxide interface traps with a delta-function-like distribution in the energy gap. The results suggest this 0.35 μm technology on UNIBOND material performs well in a proton-radiation environment.

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Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 6 )