By Topic

Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
R. Leon ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; S. Marcinkecius ; J. Siegert ; B. Cechavicius
more authors

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3D) quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4×108 to 3×1010 cm-1), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses is also observed in InGaAs/GaAs [100] QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

Published in:

IEEE Transactions on Nuclear Science  (Volume:49 ,  Issue: 6 )