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Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films

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3 Author(s)
Devine, R.A.B. ; Center for High Technol. Mater., Albuquerque, NM, USA ; Tringe, J.W. ; Chavez, J.R.

Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose0.47 variation. The possible origin of the negative charge trapping is discussed.

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Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 6 )