Skip to Main Content
The use of state-of-the-art microelectronic devices in space radiation environments faces new challenges with the adoption of low dielectric constant (low-k) materials as interlevel dielectrics. This is demonstrated in a preliminary study of methyl-silsesquioxane low-k films. We report radiation damage, induced by a 2 keV low-current-density (∼2×106 s-1 cm-2) positron beam, and observed by positron annihilation spectroscopy.
Date of Publication: Dec 2002