Skip to Main Content
A nonlinear circuit model of the GaAs MESFET is developed by extracting circuit parameters from dc and small-signal RF measurements in a systematic manner. The circuit model is then analyzed by an efficient algorithm called the modified multiple-reflection method. For the first time, this method is applied to MESFET circuit analysis. Compared with the original multiple-reflection method, the modified multiple-reflection method shows a dramatic increase in convergence speed. The validity of the nonlinear MESFET model is confirmed by comparing the simulation results with experimental data.