By Topic

A 12-dB High-Gain Monolithic Distributed Amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

By reducing gate and drain line loss associated with the active elements of a distributed amplifier, significant gain improvements are possible. Loss reduction is achieved in a novel monolithic distributed amplifier by replacing the common-source FET's of the conventional design with cascode elements having a gate length of one-quarter micron. A record gain of over 10 dB from 2 to 18 GHz and a noise figure of 4 dB at 7 GHz have been achieved on a working amplifier. Details of the design and fabrication process are described.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:34 ,  Issue: 12 )