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A 12-dB High-Gain Monolithic Distributed Amplifier

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3 Author(s)

By reducing gate and drain line loss associated with the active elements of a distributed amplifier, significant gain improvements are possible. Loss reduction is achieved in a novel monolithic distributed amplifier by replacing the common-source FET's of the conventional design with cascode elements having a gate length of one-quarter micron. A record gain of over 10 dB from 2 to 18 GHz and a noise figure of 4 dB at 7 GHz have been achieved on a working amplifier. Details of the design and fabrication process are described.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:34 ,  Issue: 12 )

Date of Publication:

Dec 1986

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