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The power performance of a four-section MESFET distributed amplifier is predicted over the frequency range 2-8 GHz. The nonlinear model of the MESFET used has three nonlinear elements: gd, and Cgs, which are represented by power series up to the third order. The analysis employs the Volterra series representation up to the third order. Experimental verification is first made on a 0.5x400-µm medium-power MESFET device to confirm the validity of the nonlinear model used in the analysis. The agreement between predicted and measured output power at 1-dB gain compression is within +-0.5 dBm across the 2-16 GHz band. A four-section distributed amplifier was then built with four 0.5x400-µm MESFET's. The agreement between predicted and measured output power at 1-dB gain compression of this amplifier is within +-0.7 dBm across the 2-8-GHz band. The measured output power at 1-dB gain compression is (22+-1) dBm across the 2-8-GHz band.