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This paper presents evidence linking excess noise in submillimeter-wave Schottky-barrier mixer diodes to stress at the devices' GaAs-SiO2 interface. At the periphery of the Schottky anodes, the SiO2 film is discontinuous and the stress surpasses the GaAs yield stress, resulting in damage to the surrounding material. By modifying the device structure in three independent manners, the stress and damage at the diode periphery were either increased or decreased; in each case, the noise temperature increased or decreased accordingly.
Microwave Theory and Techniques, IEEE Transactions on (Volume:34 , Issue: 3 )
Date of Publication: Mar 1986