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Conversion Losses in GaAs Schottky-Barrier Diodes (Short Paper)

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2 Author(s)

The conversion losses of a Schottky-barrier diode have been calculated for a set of realistic diode parameters. It is found that previous work overestimated the substrate losses by 30 percent. It is also shown that a lightly doped epitaxial layer will decrease the barrier capacitance and with properly designed thickness will avoid any resistance losses due to this layer. Parasitic losses can thus be reduced substantially.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:34 ,  Issue: 1 )