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S- and X-Band GaAs FET Mixers with Thin-Film Lumped Elements (Short Paper)

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2 Author(s)

The design and performance of 2- and 11-GHz band mixers with a single-gate GaAs FET are presented in this paper. A mixer configuration in which the load oscillator (LO) signal is applied to the source is used. Matching networks are constructed with thin-film lumped elements fabricated on alumina. An SSB noise figure of 6.2 dB, with an associated conversion gain of 10 dB, has been achieved at the 11-GHz band, and SSB noise figures of less than 6 dB and a conversion gain of more than 8 dB over a 40-percent bandwidth are obtained at the 2-GHz band.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:32 ,  Issue: 1 )