Referenced Items are not available for this document.
Resistive feedback in low-frequency FET amplifiers is an attractive method of simultaneously attaining gain flatness and excellent input-output VSWR over wide bandwidths. Combined with simple matching circnitry, the feedback approach allows the design of general-purpose utility amplifiers requiring much less chip area than when conventional matching techniques are used, The 1.5- by 1.5-mm chip desenbed in this paper provides 10-dB +-1-dB gain, excellent input and output VSWR, and saturated output power in excess of +20 dBm, from below 5 MHz to 2 GHz. The noise figure is approximately 2 dB when biased for minimum noise, with an associated gain of 9 dB.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:31
,
Issue:
1
)
Date of Publication: Jan. 1983
- Page(s):
- 27 - 29
- ISSN :
- 0018-9480
- Digital Object Identifier :
- 10.1109/TMTT.1983.1131422
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Jan. 1983
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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