By Topic

A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and +-1-dB gain flatness in the 1-13-GHz frequency range. The circuit is realized in monolithic form on a 0.1-mm GaAs substrate with 50-Omega input and output lines. In this approach GaAs FET's periodically load input and output microstrip lines and provide the coupling between them with proper phase through their transconductance. Experimental results and the circuit details of such a structure are discussed. Initial results of a noise analysis and predictions on the noise performance are also given.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:30 ,  Issue: 7 )