By Topic

A DC-12 GHz Monolithic GaAsFET Distributed Amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

A monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated. The amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 X0.97-mm die. Its gain versus frequency is very flat, and |S 11|, |S 12|, and |S 22| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:30 ,  Issue: 7 )