Referenced Items are not available for this document.
A simple MESFET capacitance model which has a clearly explained physical meaning for a wide bias voltage range has been developed for use in simulations of GaAs integrated circuits. In this model, gate-source, gate-drain capacitances are represented by analytical expressions which are classified into three different regions for bias voltages: a before-pinch-off region including the neighborhood of the built-in voltage, an after-pinch-off region, a transition region. 2-dimensional analysis results support the validity of the analytically derived capacitance model. The model is applicable to MESFET's used in integrated circuits that have low donor-thickness product.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:30
,
Issue:
5
)
Date of Publication: May 1982
- Page(s):
- 719 - 724
- ISSN :
- 0018-9480
- Digital Object Identifier :
- 10.1109/TMTT.1982.1131127
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- May 1982
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
