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Design and Fabrication Techniques for Lumped-Element GaAs MESFET Power Amplifiers Using Automated Assembly Procedures

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3 Author(s)

This paper describes the development and fabrication of lumped-element GaAs MESFET power amplifiers. The amplifiers manufactured were designed for both narrow-band and wideband (6-11 GHz) operation. Emphasis is directed toward performance trimming and automated assembly.

Published in:

Microwave Symposium Digest, 1982 IEEE MTT-S International

Date of Conference:

15-17 June 1982