By Topic

RF Characterization of Microwave Power Fet's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

The large-signal S-parameter S22 and the optimum load for maximum output power are two parameters commonly used in the RF characterization of microwave power FET's. Using a nonlinear circuit model of the device, the dependence on RF power of each of these parameters is investigated. A method is given for computing the optimum load from the Iarge-signal S22. Equivalent load-pull data can thus be obtained without the need for load-pull measurements. The gain compression characteristics of the transistor for arbitrary load can be computed from large-signal S21, and S22 data.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:29 ,  Issue: 8 )