Skip to Main Content
The large-signal S-parameter S22 and the optimum load for maximum output power are two parameters commonly used in the RF characterization of microwave power FET's. Using a nonlinear circuit model of the device, the dependence on RF power of each of these parameters is investigated. A method is given for computing the optimum load from the Iarge-signal S22. Equivalent load-pull data can thus be obtained without the need for load-pull measurements. The gain compression characteristics of the transistor for arbitrary load can be computed from large-signal S21, and S22 data.