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Reliability of Power Gaas FET's-Au Gates and Al-Au Linked Gates

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3 Author(s)

An investigation of the reliability of two types of commercial microwave power GaAs FET's has been carried out. Mean-time-to-failure data for a device mounted face-up with Al gates but without an Al-Au couple is presented and similar data for a "flip-chip" mounted Au-refractory gate device is reviewed. The failure mechanisms for both devices are described.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:29 ,  Issue: 7 )