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Determination of the Electrode Capacitance Matrix for GaAs FET's

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3 Author(s)

In this paper, a method is presented which provides the electrode capacitance matrix for GaAs FET's. The method incorporates a Green's function, valid for conductors printed on or embedded in a grounded substrate, with the moment method technique. Although calculations for various geometries of printed conductors are considered, emphasis is placed on the computation of self- and mutual-capacitances for the source, gate, drain equivalent circuit of a GaAs FET. As an example, the speed power characteristics of a depletion-rnode GaAs FET inverter circuit are examined, as a function of device width, pad and gate length.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:28 ,  Issue: 5 )