By Topic

Intrinsic Response Time of Normally Off MESFET's of GaAs, Si, and InP

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

A response time of normally off MESFET's for high-speed Iogic circuits made of GaAs, Si, and InP was calculated using a two-dimensional numerical analysis. The results indicate that GaAs is the best material among them. The step response of the InP FET is not as fast as expected from v/E characteristics due to low electric field in the channel for low-power logic operation of a normally off FET.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:28 ,  Issue: 5 )