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A 12-GHz 1-W GaAs MESFET Amplifier

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3 Author(s)

A practical method using small signal S22 is presented for the design of GaAs MESFET power amplifier. A five-stage MIC amplifier, which delivers 1-W power output with 27-dB linear gain in the 12-GHz band, was constructed based on this method. Further improvement in the power performance of the amplifier was investigated using newly developed flip-chip MESFET's resulting in 4-W and 2-W power outputs for a unit and a five-stage amplifier, respectively.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:27 ,  Issue: 12 )