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3-GHz 15-W Silicon Bipolar Transistors

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4 Author(s)

Silicon bipolar transistors delivering 15-W CW output power with 4.8-dB gain and 38-percent collector efficiency have been developed at 3 GHz. The transistors have been fabricated by boron ion implantation for base region and arsenic diffusion from doped polysilicon for emitter region. Chemical dry-etching techniques for fine patterning and internal-matching techniques have been applied.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:27 ,  Issue: 12 )

Date of Publication:

Dec 1979

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