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Simulation of Nonlinear Microwave FET Performance Using a Quasi-Static Model

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2 Author(s)

A technique is described for accurately predicting nonlinear performance of microwave GaAs field-effect transistors in arbitrary circuit embedding. The approach is based on a quasi-static device model which is derived from measured bias and frequency dependence of the small-signal device S parameters. Excellent agreement is demonstrated between experimental and predicted "load-pull" characteristics at X band.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:27 ,  Issue: 10 )