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Conventional methods for noise parameter measurement for linear noisy two-ports have been improved by introducing a computational method for evaluating measured admittance errors. Derivation and comparison with a conventional method are given. Noise parameters of a packaged 0.5-mu m gate-length GaAs MESFET (NE38806) were successfully measured using the proposed technique.
Microwave Theory and Techniques, IEEE Transactions on (Volume:27 , Issue: 6 )
Date of Publication: Jun 1979