By Topic

Large Signal GaAs MESFET Oscillator Design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

Techniques for large signal GaAs MESFET oscillator design are described which do not require repeated large signal measurement. In the first technique, small signal S-parameter measurements are used with a computer program to compute the packaged and mounted device equivalent circuit. Large signal measurements are made to determine a mathematical relationship between only those parameters which vary under large signal conditions. These relationships are included in the computer program. Then, once the equivalent circuit has been computed from the small signal S-parameter measurements, those parameters varying under large signals are incrementally altered until large signal S parameters are obtained which correspond to maximum oscillator output power. These values are used to calculate embedding element values for six oscillator topologies. A coaxial cavity FET oscillator was built and tested using the large signal design theory, and it substantially verified the design technique. The second design technique is based on the fact that S21 varied more than other S parameters under large signals. By making design calculations based on S21 reduced to the point corresponding to maximum oscillator power, it was possible to get usable design information for an FET oscillator.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:27 ,  Issue: 3 )