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Analysis and Design of an X-Band Actively Compensated IMPATT Diode Amplifier

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2 Author(s)

This paper shows how broad-banding of an IMPATT diode amplifier can be achieved using a circuit technique known as active reactance compensation. Theoretical analysis and experimental results both show that the gain-bandwidth products of an uncompensated IMPATT amplifier improves from G12/B = k to G14/B = 2k (where k is a constant) for the same amplifier actively compensated. The measured 3-dB bandwidth of 230 MHz for a 9.0-GHZ amplifier having a gain of 10 dB is improved to 700 MHz at the same gain.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:27 ,  Issue: 1 )