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A Technique for Predicting Large-Signal Performance of a GaAs MESFET

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3 Author(s)

A method is described for accurately predicting the nonlinear microwave performance of GaAs MESFET devices. The method utilizes time-domain analysis and is based upon the experimentally characterized bias dependence of device-circuit model elements. Precise predictions are made of fundamental and harmonic power levels up to 6 dB of gain compression.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:26 ,  Issue: 12 )