Skip to Main Content
300- and 450-GHz band doublers and triplers using thin-film integrated circuits have been developed. The multipliers are built with a GaAs honeycomb-type Schottky barrier diode designed to have a high cutoff frequency and transitions from microstrip to rectangular waveguides. A 450-GHz band tripler delivered an output power of -11.2 dBm with a corresponding conversion loss of 19.4 dB. The output power of the 300-GHz band doubler was -3.6 dBm, and its minimum conversion loss was 10.7dB. The hybrid integrated frequency multipliers are useful as solid-state sources in the short-millimeter-wave and subrnillimeter-wave regions.