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High Power GaAs IMPATT Amplifier

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6 Author(s)

10-W p-n junction GaAs IMPATT diodes with MTTF more than 106 h, have been developed. Using these diodes, amplifiers of 5-W output power, 10-dB gain, 17-percent efficiency, 150-MHz bandwidth, and 80-dB signal-to-noise ratio (S/N ratio) have been constructed.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:25 ,  Issue: 12 )