Close category search window
 

A Quasi-Linear Approach to the Design of Microwave Transistor Power Amplifiers (Short Papers)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
1 Author(s)

A method of large-signal transistor characterization and power amplifier design is described which allows the designer to predict the load and source terminations required for optimum added-power circuit efficiency, and to see graphically how efficiency and power gain change as a function of the load termination. Experimental results obtained with a 1-W bipolar junction transistor (BJT) amplifier at 1.3 GHz are presented.

Published in:
Microwave Theory and Techniques, IEEE Transactions on  (Volume:24 ,  Issue: 12 )

Date of Publication: Dec 1976

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.