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A Quasi-Linear Approach to the Design of Microwave Transistor Power Amplifiers (Short Papers)

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A method of large-signal transistor characterization and power amplifier design is described which allows the designer to predict the load and source terminations required for optimum added-power circuit efficiency, and to see graphically how efficiency and power gain change as a function of the load termination. Experimental results obtained with a 1-W bipolar junction transistor (BJT) amplifier at 1.3 GHz are presented.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:24 ,  Issue: 12 )