By Topic

Frequency Multiplication By A P-I-N Diode When Driven Into Avalanche Breakdown

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

An investigation of frequency multiplication using a step-recovery diode (SRD) driven into avalanche breakdown is presented. This mode of operation, which is called the "breakdown mode," consists of a reverse-biased p-n junction, SRD, or IMPATT diode driven into reverse breakdown by an ac signal source. As the diode voltage passes from reverse bias to reverse breakdown and avalanche, the state of the diode switches quickfy from a depletion-layer capacitance to an avalanche inductance; hence the production of strong harmonics. A theoretical analysis and experimental investigation of a coaxial/waveguide 2-6-GHz frequency multiplier using HP5082-0320 step-recovery diodes, [Rs = 0.75 Omega, Cd(-6v) = 1.0 pF] shows that the breakdown-mode frequency multiplier has a higher conversion efficiency than the conventional "charge-storage" multipuer. A measured conversion efficiency of 73 percent was achieved while the same circuit configuration produced 52 percent for the same diode used as a charge-storage multiplier under optimum forward-drive and tuning conditions. Also the theory developed in this paper indicates a maximum possible conversion efficiency of 80 percent for the breakdown-mode multiplier, which corresponds closely with the measured results, and a maximum theoretical efficiency for a forward driven diode of 64 percent. The performance of an FM microwave system was monitored using the breakdown multiplier as a LO in which a baseband SNR of 59 dB was recorded.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:23 ,  Issue: 6 )