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The successful fabrication of low-loss two-dimensional GaAs epitaxial waveguides by chemical etching for use in integrated optics at 10.6 μm is reported. Selective excitation of specific Epqy modes was observed by placing the prism at specific angles in the horizontal plane. Loss measurements showed no increase in attenuationfor lower order Epqy modes (as compared to corresponding one-dimensional waveguide modes) when the guide width is 50 μm. As the guide width is reduced, there is a significant increase in attenuation as p increases.