By Topic

Properties of Microstrip Line on Si-SiO2 System

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

A parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment. The experiment has been performed over wide ranges of frequency, substrate resistivity, and strip width. Existence of three types of fundamental modes is concluded and the condition for the appearance of each mode is clarified. In particular, the slow-wave mode is found to propagate within the resistivity-frequency range suited to the monolithic circuit technology, and its propagation mechanism is discussed. Approximate analysis of the fringing effect is also made for the slow-wave mode.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:19 ,  Issue: 11 )
RFIC Virtual Journal, IEEE