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Power transmitted or reflected at millimeter wave-lengths in image-converting systems using a semiconductor illuminated panel is determined. The panel assembly response is defined and evaluated for two modes of operation. In the reflection mode both the cases of uniform circular light illumination and laser beam illumination of the semiconductor material are considered. In the transmission mode of operation the panel is assumed to be uniformly illuminated apart from a circular shadow region. The effect of recombination velocity at the surface of the semiconductor panel is determined.