By Topic

Rapid thermal processing effect on the intragrain and grain boundaries properties of multicrystalline silicon solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

A high-performance light-beam-induced-current (LBIC) analyzer has been used to determine the influence of rapid thermal annealing (RTA) on the minority-carrier diffusion length (L). For this purpose, a Schottky diode (Al/Si) was fabricated on polycrystalline p-type silicon. The contacts were obtained by a cold technology. The diffusion length was determined by a laser spot scanning method. The results of a detailed analysis of the effect of various RTA parameters, such as plateau temperature and duration, on L as deduced from the LBIC analysis of the corresponding Schottky diodes are reported. Presently reported investigations of the effect of RTA on the intragrain transport properties showed nearly no variation in L for samples subjected to treatments below 500°C. On the other hand, a sharp decrease in L, and consequently a degradation in the overall solar cell efficiency, for samples subjected to RTA during 10 s in the range of 600-900°C are obtained. For longer annealing time (up to ≈30 s), a partial recovery effect is observed

Published in:

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Date of Conference:

21-25 May 1990