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High Performance Monolithic Power Amplifier Using a Unique Ion Implantation Process

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3 Author(s)

State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in IDSS and VPO.

Published in:

Microwave and Millimeter-Wave Monolithic Circuits  (Volume:86 ,  Issue: 1 )

Date of Conference:

Jun 1986