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An expert system for process monitoring, diagnostics and control [VLSI and ULSI circuits]

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3 Author(s)
Nicollian, E.H. ; North Carolina Univ., Charlotte, NC, USA ; Chen, S.-C. ; Tsu, R.

An expert system for monitoring VLSI and ULSI integrated circuit process parameters which is based on the concepts of the charge-capacitance method is described. The process parameters determined are oxide leakage current, impedance to establish electric contact quality, oxide layer thickness, semiconductor doping profile, oxide fixed charge density, interface trap density, semiconductor band bending, and threshold voltage of a MOSFET. Instrumentation and measurement are discussed

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990

Date of Conference:

11-12 Sep 1990