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Modelling of charging effects caused by anodic bonding in packaged MOS devices

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5 Author(s)

The electrical effects of anodic bonding on the gate oxide of packaged MOS devices are presented, and shown to be dependent both on the gate oxide fabrication process and on the design of the glass cavity. Methods to incorporate these effects in the device models to ensure reliable circuit simulations for the wafer-level packaged devices are proposed.

Published in:

Electronics Letters  (Volume:38 ,  Issue: 24 )