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This paper present the fabrication process for the manufacturing of hybrid integrated receiver modules for 38 GHz and 77 GHz operating frequency, on micromachined silicon substrate. The hybrid receiver structures consist of a membrane-supported antenna, a GaAs Schottky detector diode, a matching network and a low-pass filter on a bulk material area of the chip. The technological process and the manufacturing characteristics are presented. AFM, SEM, and white light interferometry have been used for microphysical characterization.