By Topic

Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Walker, J.A. ; AT&T Bell Lab., Holmdel, NJ, USA ; Gabriel, K.J. ; Mehregany, M.

The results from a comparative study of Young's modulus, residual stress, and membrane burst pressure of undoped LPCVD polysilicon films exposed to various concentrations of hydrofluoric acid (HF) are presented. A reversal from compressive to tensile stress through a high-temperature anneal for large-grain polysilicon is an important (although ancillary) result of this study. As HF concentration is increased, residual stress decreases, while Young's modulus increases. Membrane burst pressure and estimated fracture strain show a significant decrease with increasing HF concentration. A significant result is that the change in the mechanical properties studied from exposure to pure HF or 1:1 DI:HF is identical. Furthermore, in relation to exposure to 10:1 DI:HF solutions, this change is small. However, with the addition of a buffering agent in a 10:1 buffered oxide etchant solution, the changes in the mechanical properties, particularly the films fracture strain, are reduced appreciably

Published in:

Micro Electro Mechanical Systems, 1990. Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE

Date of Conference:

11-14 Feb 1990