By Topic

An investigation of the electrochemical etching of

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
McNeil, V.M. ; Microsystems Technol. Lab., MIT, Cambridge, MA, USA ; Wang, S.S. ; Ng, K.-Y. ; Schmidt, M.A.

Results from an investigation of the electrochemical etching of silicon in KOH:H/sub 2/O and CsOH:H/sub 2/O solutions are presented. Current versus voltage (I-V) scans were performed on both n- and p-type silicon as a function of etchant concentration (20-60% by weight KOH and 25-70% by weight CsOH) and temperature (25-80 degrees C). Voltage scans were swept from potentials cathodic of the open-circuit potential (OCP) to potentials anodic of the passivation potential. The purpose of the I-V scans was to investigate systematically how varying etchant concentration and temperature affected the passivation potential and final passivation current density of n- and p-type silicon. The results of the I-V scans are used to help investigate conditions for optimizing the performance of three-electrode electrochemical etch stop on n/sup +/-p junction samples. A model is presented to describe the effect of reverse diode leakage on etch-stop performance which uses the previously measured electrochemical etching parameters. Experimental measurements of the etch stop are used to confirm the model.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1990. 4th Technical Digest., IEEE

Date of Conference:

4-7 June 1990