By Topic

V-band 2-b and 4-b low-loss and low-voltage distributed MEMS digital phase shifter using metal-air-metal capacitors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Hong-Teuk Kim ; Sch. of Electr. Eng., Seoul Nat. Univ., South Korea ; Jae-Hyoung Park ; Sanghyo Lee ; Seongho Kim
more authors

Low-loss digital distributed phase shifters have been developed using micromachined capacitive shunt switches for V-band applications. Instead or conventional metal-insulator-metal capacitors, high-Q metal-air-metal capacitors were used in series with the microelectromechanical system (MEMS) shunt capacitive switches to minimize the dielectric loss. The operation voltage for the phase shifters was also reduced by applying the bias directly to the MEMS shunt switches through choke spiral inductors. Fabricated 2-b (270°) and 4-b (337.5°) distributed phase shifters showed low average insertion losses of 2.2 dB at 60 GHz and 2.8 dB at 65 GHz, respectively. The average phase errors for 2-b and 4-b phase shifters were 6.5% and 1.3%, respectively. The return losses are better than 10 dB over a wide frequency range from 40 to 70 GHz. Most of the circuits operated at 15-35-V bias voltages. These phase shifters present promising solution to low-loss integrated phase shifting devices at the V-band and above.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:50 ,  Issue: 12 )