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A novel design and performance of a power MOS transistor for RF system-on-chip applications are reported. The power MOS transistor with high breakdown voltage is integrated into 0.18-μm CMOS technology with only one additional mask. By an optimized design considering all aspects of DC and RF performances, a power MOS transistor with 16-GHz cutoff frequency and 24-GHz maximum oscillation frequency has been demonstrated. In addition, the power gain is 12 dB at 2.4 GHz with power-added efficiency of 50%. In this study, the device architectures that include drain engineering, substrate engineering, and gate scaling are investigated comprehensively.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:50
,
Issue:
12
)
Date of Publication: Dec 2002
- Page(s):
- 2873 - 2881
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 7486307
- Digital Object Identifier :
- 10.1109/TMTT.2002.805289
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 16 December 2002
- Issue Date :
- Dec 2002
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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