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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:23 Issue:11 Help

Improvement of electrical and reliability properties of tantalum pentoxide by high-density plasma (HDP) annealing in N2O

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7 Author(s)
Chang, S.J. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Lee, J.S. ; Chen, J.F. ; Sun, S.C.
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This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) tantalum pentoxide (Ta/sub 2/O/sub 5/) films by a new post-deposition annealing technique using high-density plasma (HDP). Experimental results indicate that excited oxygen atoms generated by N/sub 2/O decomposition from HDP annealing can effectively reduce the carbon and hydrogen impurity concentrations and repair the oxygen vacancies in the as-deposited CVD Ta/sub 2/O/sub 5/ film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: HDP O/sub 2/ annealing and conventional plasma O/sub 2/ annealing. The comparison reveals that HDP N/sub 2/O annealing has the lowest leakage current and superior time-dependent dielectric breakdown (TDDB) reliability.

Published in:
Electron Device Letters, IEEE  (Volume:23 ,  Issue: 11 )

Date of Publication: Nov. 2002

Page(s):
643 - 645
ISSN :
0741-3106
INSPEC Accession Number:
7477382
Digital Object Identifier :
10.1109/LED.2002.805029
Product Type:
Journals & Magazines
Date of Current Version :
16 December 2002
Issue Date :
Nov. 2002
Sponsored by :
IEEE Electron Devices Society

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