Cart (Loading....) | Create Account
Close category search window
 

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Iiyama, K. ; Dept. of Electr. & Electron. Eng., Kanazawa Univ., Japan ; Kita, Y. ; Ohta, Y. ; Nasuno, M.
more authors

A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based upon the scaling rule, of field-effect-type transistors. We describe the fabrication and characterization of GaAs MISFETs with a nm-thin oxidized layer as the gate insulating layer, which is formed by an ultraviolet (UV) and ozone process. The UV and ozone process forms oxidized GaAs layers near the surface, which effectively suppress the reverse leakage current by several orders of magnitude. The fabricated GaAs MISFET can operate not only in the depletion mode, but also in the accumulation mode up to 3 V gate voltage for 8-nm-thick oxidized layers due to the current blocking effect of the oxidized layer. A current cutoff frequency of 6 GHz and a maximum oscillation frequency of 8 GHz are obtained for a GaAs MISFET with 1-μm gate length and 8-nm-thick oxidized layers.

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 11 )

Date of Publication:

Nov 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.